19–21 Nov 2024
Max-Planck-Institut für Eisenforschung GmbH
Europe/Berlin timezone

Atomic-Scale Analysis of Bismuth-Based Layered Oxy-chalcogenides Using Atom Probe Tomography

20 Nov 2024, 14:10
20m
Room 203 (large seminar room) (Max-Planck-Institut für Eisenforschung GmbH)

Room 203 (large seminar room)

Max-Planck-Institut für Eisenforschung GmbH

Max-Planck-Str. 1 40237 Düsseldorf

Speaker

Sumayya Sumayya (RWTH, Aachen)

Description

The beauty of Bismuth-based layered oxy-chalcogenide is their two distinct alternatively stacked layered structure having completely different chemical bonds in each layer i.e., oxide layer and chalcogen layer. This interesting layered structure allows the tuning of properties and can make a potential candidate in different fields such as thermoelectrics. For a thermoelectric device, Bi2O2Se is considered a perfect n-type candidate to pair with p-type BiCuSeO. The thermoelectric performance is related to their microstructure, chemical composition, and bonding mechanism. However, the studies show that a small variation in chemical composition leads to a great change in properties. However, atom probe tomography has a unique ability to explain the bonding mechanism of materials. In the literature, the Bismuth-based layered oxy-chalcogenides analysis on an atomic scale has not been reported until now. In this study, the atom probe data on three compositions, Bi2O2Se, Bi2O2Se0.5Te0.5, and Bi2O2Te, will be discussed to understand the chemical bonding mechanism in these layered structures.

Primary authors

Sumayya Sumayya (RWTH, Aachen) Dr Yuan Yu (RWTH, Aachen)

Presentation materials

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